Ion implant isolation technology for AlGaN/GaN HEMTs

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 4, 2004, Pages 458-461

  Xiao, Dongping ^a   Liu, Jian ^a   Wei, Ke ^a   He, Zhijing ^a   Wang, Runmei ^a   Liu, Xinyu ^a   Wu, Dexin ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

AlGaN GaN; HEMTs; Ion implantation

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HELIUM; HETEROJUNCTIONS; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

SEMICONDUCTING ALUMINUM GALLIUM NITRIDE; SEMICONDUCTING GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 7244220055     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

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