Electrical properties of clustered and precipitated iron in silicon

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 109-114

  Khalil, R ^a,b   Kveder, V ^a,c   Schroter W ^a   Seibt, M ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b BENHA UNIVERSITY   (Egypt)

^c INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

DLTS; Extended defects; Iron; Silicide precipitates; Silicon

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; INTERFACE STATES; IRON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICIDES; SILICON;

DEEP ELECTRONIC STATE; EXTENDED DEFECT; IRON SILICIDES; MATRIX INTERFACES; MODERATE TEMPERATURE; SILICIDE PRECIPITATE;

DEFECTS;

EID: 36049014995     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.109     Document Type: Conference Paper

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