Atomic structure and electronic states of nickel and copper silicides in silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 72, Issue 2, 2000, Pages 80-86

  Schroter W ^a   Kveder, V ^a   Seibt, M ^a   Ewe, H ^a   Hedemann, H ^a   Riedel, F ^a   Sattler, A ^a  

^a IV Physikalisches Inst G   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER COMPOUNDS; CRYSTAL ATOMIC STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HIGH RESOLUTION ELECTRON MICROSCOPY; NICKEL COMPOUNDS; PRECIPITATION (CHEMICAL); SCHOTTKY BARRIER DIODES;

BOUNDING DISLOCATION; COPPER SILICIDE PRECIPITATES; ELECTRON BEAM INDUCED CURRENT; METASTABLE STRUCTURES; MINORITY CARRIER; SLOW COOLING;

SILICON;

EID: 0343893637     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00499-7     Document Type: Article

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