6.2 Å In0.2Al0.8Sb/InAs0.7Sb0.3 HEMTs for low -voltage high-frequency applications

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Volumn , Issue , 2003, Pages 352-

  Papanicolaou, N A ^a   Tinkham, B P ^a   Boos, J B ^a   Bennett, B R ^a   Bass, R ^a   Park, D ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; HETEROJUNCTIONS; LATTICE CONSTANTS; LEAKAGE CURRENTS; MILITARY APPLICATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR QUANTUM WELLS;

COMMERCIAL APPLICATIONS; DIGITAL APPLICATIONS; GATE-LEAKAGE CURRENT; HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); HIGH-FREQUENCY APPLICATIONS; HIGH-SPEED DEVICES; LOW-POWER CONSUMPTION; TYPE II HETERO JUNCTIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84945246296     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2003.1272130     Document Type: Conference Paper

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