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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 36-40, 2007, Pages

Analytical description of intravalley acoustic phonon limited electron mobility in ultrathin Si plate incorporating phonon modulation due to plate interfaces

(2) Uno, Shigeyasu a Mori, Nobuya b

a NAGOYA UNIVERSITY (Japan)

b OSAKA UNIVERSITY (Japan)

Author keywords

Confined acoustic phonon; Double gate; Electron mobility; FinFET

Indexed keywords

ELECTRON MOBILITY; INTERFACES (MATERIALS); PHONON SCATTERING; SILICON;

CONFINED ACOUSTIC PHONONS; DOUBLE GATE; PHONON MODULATION;

ULTRATHIN FILMS;

EID: 36048943889 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.L923 Document Type: Article

Times cited : (7)

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