Confined electron-confined phonon scattering rates in wurtzite AlN/GaN/AlN heterostructures

Journal of Applied Physics

Volumn 95, Issue 10, 2004, Pages 5626-5632

  Pokatilov, Evgenii P ^a   Nika, Denis L ^a   Balandin, Alexander A ^b  

^a MOLDOVA STATE UNIVERSITY   (Moldova)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON-PHONON INTERACTIONS; PHONON ENGINEERING; PHONON SCATTERING; PIEZOELECTRIC POTENTIALS;

ACOUSTIC WAVE SCATTERING; ALUMINUM NITRIDE; BOUNDARY CONDITIONS; DEFORMATION; ELECTRIC FIELD EFFECTS; ELECTROMAGNETIC WAVE POLARIZATION; GALLIUM NITRIDE; HAMILTONIANS; NANOSTRUCTURED MATERIALS; OPTIMIZATION; PHONONS; PIEZOELECTRICITY; RELAXATION PROCESSES;

HETEROJUNCTIONS;

EID: 2942573233     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1710705     Document Type: Article

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