Effect of N2O or NO annealing of wet oxide at different times on TDDB characteristics

International Integrated Reliability Workshop Final Report

Volumn , Issue , 1996, Pages 125-133

  Mazumder, M K ^a   Teramoto, A ^a   Kobayashi, K ^a   Katsumata, M ^a   Mashiko, Y ^a   Sekine, M ^a   Koyama, H ^a   Yasuoka, A ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; MOS DEVICES; NITRIDING; OXIDES; RADIATION HARDENING; STRESSES;

CHARGE TRAPPING; CURRENT STRESSING; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB); WET OXIDES;

DIELECTRIC FILMS;

EID: 0030373755     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (24)