The characteristics of wet gate oxide device and nitride oxide (NO) device

IEEE Region 10 Annual International Conference, Proceedings/TENCON

Volumn 2, Issue , 1999, Pages 1136-1139

  Jae Young, Yi ^a   Yong Hui, Lee ^b   Laszlo, Szirmay Kalos ^a   Cheon Hee, Yi ^c  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^b Hynix Semiconductor Inc   (South Korea)

^c Chongju University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; GATES (TRANSISTOR); HOT CARRIERS; MOSFET DEVICES; NITRIDES;

GATE DEVICES; GATE OXIDE; GATE OXIDE DEVICE; HOT CARRIER EFFECT; NITRIDE OXIDE; NMOSFET; STRESS-INDUCED LEAKAGE CURRENT;

CARRIER LIFETIME;

EID: 33947197115     PISSN: 21593442     EISSN: 21593450     Source Type: Conference Proceeding    
DOI: 10.1109/TENCON.1999.818625     Document Type: Conference Paper

References (5)

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2. Chenming Hu, "Gate Oxide Scaling Limits and Projection, " IEDM, pp. 319-322, 1996.
3. D. Lin, J. Cable, and J. Woo, Temperature and Electric Field Characteristics of Timedependent Dielectric Breakdown for Silicon Dioxide and Re-oxideized-nitrided Oxides, " IEEE Trans. Electron Devices, vol. 42. Pp. 1329-1332, July 1995.
4. T. Matsuoka, S. Taguchi, H. Ohtsuka, K. Taniguchi, C. hamaguchi, S. kakimoto, and K. Uda, "Hot Carrier Induced Degradation of N20 Oxynitrided Gate Oxide NMOSFETs, " IEEE Trans. Electron Devices, vol. 43, pp. 1364-1373, sept. 1996.
5. L. Han, D. Wristers, M. Bhat, and DKwong, "Highly Suppressed Penetration in NO-nitrided Si02 for P+ Polysilicon Gated MOS Device Applications, " Electron Device Lett. , vol. 16, pp. 319-321, July. 1995.