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Volumn 5366, Issue , 2004, Pages 75-84

Optimization and performance of AlGaN-based multi-quantum well deep UV LEDs

Author keywords

AlGaN; Light emitting diode; Ultraviolet

Indexed keywords

AGENT DETECTION; CURRENT INJECTION; DEEP LEVEL STATES; WAVELENGTHS;

EID: 3543128815     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.529659     Document Type: Conference Paper
Times cited : (4)

References (18)
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    • Lateral Epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
    • O. H. Nam, M. D. Bremser, T. S. Zheleva and R. F. Davis, "Lateral Epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy", Appl. Phys. Lett. 71, 2638-2640 (1997).
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 2638-2640
    • Nam, O.H.1    Bremser, M.D.2    Zheleva, T.S.3    Davis, R.F.4
  • 13
    • 79955997004 scopus 로고    scopus 로고
    • AlN/AlGaN superlattices as dislocation filter for low-threading dislocation thick AlGaN layers on sapphire
    • H. M. Wang, J. P. Zhang, C. Q. Chen, Q. Fareed, J. W. Yang and M. Asif Khan, "AlN/AlGaN superlattices as dislocation filter for low-threading dislocation thick AlGaN layers on sapphire", Appl. Phys. Lett. 81, 604-606 (2002).
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 604-606
    • Wang, H.M.1    Zhang, J.P.2    Chen, C.Q.3    Fareed, Q.4    Yang, J.W.5    Asif Khan, M.6
  • 14
    • 0035943833 scopus 로고    scopus 로고
    • Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry
    • X. Guo, Y.-L. Li and E. F. Schubert, "Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry", Appl. Phys. Lett. 79, 1936-1938 (2001).
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 1936-1938
    • Guo, X.1    Li, Y.-L.2    Schubert, E.F.3
  • 17
    • 0242666917 scopus 로고    scopus 로고
    • AlGaN multi-quantum well based deep ultraviolet light emitting diodes with significantly reduced long-wave emission
    • J. P. Zhang, S. Wu, S. Rai, V. Mandavilli, V. Adivarahn, A. Chitnis, M. Shatalov and M. Asif Khan, "AlGaN multi-quantum well based deep ultraviolet light emitting diodes with significantly reduced long-wave emission", Appl. Phys. Lett. 83, 3456-3458 (2003).
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 3456-3458
    • Zhang, J.P.1    Wu, S.2    Rai, S.3    Mandavilli, V.4    Adivarahn, V.5    Chitnis, A.6    Shatalov, M.7    Asif Khan, M.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.