Effect of film thickness on electrical properties of chemical solution deposition-derived Pb(ZrxTi1-x)O3 /LaNiQ 3/Si

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 10 B, 2007, Pages 6925-6928

  Sakamaki, Yoshihiro ^a   Fukazawa, Hiroaki ^a   Wakiya, Naoki ^a   Suzuki, Hisao ^a   Shinozaki, Kazuo ^b   Ohno, Tomoya ^c   Kosec, Marija ^c  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

CSD; Ferroelectricity; Ferroelectrics; LaNiO3 thin film; Preferred orientation; PZT thin film; Residual stress

Indexed keywords

CRYSTAL SYMMETRY; FERROELECTRICITY; FILM THICKNESS; LANTHANUM COMPOUNDS; LATTICE CONSTANTS; RESIDUAL STRESSES; THIN FILMS;

CHEMICAL SOLUTION DEPOSITION (CSD); DIFFERENT THICKNESSES; MORPHOTROPIC PHASE BOUNDARY (MPB); PREFERRED ORIENTATION;

FERROELECTRIC MATERIALS;

EID: 35348996125     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6925     Document Type: Article

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