Fabrication technology of ferroelectric memories

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1325-1327

  Nakamura, Takashi ^a   Fujimori, Yoshikazu ^a   Izumi, Naoki ^a   Kamisawa, Akira ^a  

^a ROHM CO LTD   (Japan)

Author keywords

Fatigue and imprint characteristics; Ferroelectric memory; Ir based electrode; Pb(Zi,Ti)O3 on poly Si

Indexed keywords

EID: 0000755861     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1325     Document Type: Article

References (6)

1. T. Nakamura, Y. Nakao, A. Kamisawa and H. Takasu: Appl. Phys. Lett. 65 (1994) 1522.
2. S. S. Eaton, D. B. Butler, M. Paris, D. Wilson and H. McNellie: Dig. Tech. Pap. IEEE Int. Solid-State Circuit Conf., New York, 1988, p. 130.
3. S. Y. Wu: Ferroelectrics 11 (1976) 376.
4. T. Nakamura, Y. Nakao, A. Kamisawa and H. Takasu: Dig. Tech. Pap. IEEE Int. Solid-State Circuit Conf., San Francisco, 1995, p. 68.
5. T. Nakamura, Y. Nakao, A. Kamisawa and H. Takasu: Integrat. Ferroelectr. 9 (1995) 179.
6. T. Nakamura, Y. Nakao, A. Kamisawa and H. Takasu: Jpn. J. Appl. Phys. 34 (1995) 5187.