Effect of Auger recombination on the performance of p -doped quantum dot lasers

Applied Physics Letters

Volumn 88, Issue 16, 2006, Pages

  Mokkapati, S ^a   Buda, M ^a,b   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DOPING (ADDITIVES); MATHEMATICAL MODELS; SEMICONDUCTOR QUANTUM DOTS;

AUGER RECOMBINATION; CARRIER INJECTION DENSITIES; MODERATE ACCEPTOR CONCENTRATIONS; QUANTUM DOT-WETTING LAYER SYSTEM;

SEMICONDUCTOR LASERS;

EID: 33646204902     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2193433     Document Type: Article

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