Target-surface compound layers formed by reactive sputtering of Si target in Ar + O2 and Ar + N2 mixed gases

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 10 A, 2007, Pages 6778-6781

  Abe, Yoshio ^a   Takisawa, Takaya ^a   Kawamura, Midori ^a   Sasaki, Katsutaka ^a  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ellipsometry; Plasma oxidation and nitridation; Reactive sputtering; Si model target; Target surface state

Indexed keywords

ELLIPSOMETRY; GAS MIXTURES; NITRIDATION; NITRIDES; OXIDES; REACTIVE SPUTTERING; SILICON WAFERS; THIN FILMS;

OXYGEN PLASMA; PLASMA OXIDATION AND NITRIDATION; SI MODEL TARGETS; TARGET SURFACE STATES;

SILICON COMPOUNDS;

EID: 35348928619     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6778     Document Type: Article

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