Target surface oxide layer formed by reactive sputtering of Ti target in Ar+O2 mixed gas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 5, 2005, Pages 1371-1374

  Abe, Yoshio ^a   Takamura, Kenji ^a   Kawamura, Midori ^a   Sasaki, Katsutaka ^a  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ELLIPSOMETRY; OXYGEN; SILICON WAFERS; SPUTTERING; TITANIUM;

OXIDE LAYER THICKNESS; REACTIVE SPUTTERING; RF POWER;

THIN FILMS;

EID: 31144456891     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2006135     Document Type: Article

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