Effect of target temperature on the reactive d.c.-sputtering of silicon and niobium oxides

Thin Solid Films

Volumn 287, Issue 1-2, 1996, Pages 57-64

  Chau, Raymond Y ^a,b   Ho, W S ^a,c   Wolfe, J C ^a   Licon, Darian L ^a,d  

^a UNIVERSITY OF HOUSTON   (United States)

^b Plasma and Materials Technologies   (United States)

^c CVC Products Inc   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

Evaporation; Niobium oxide; Silicon oxide; Sputtering

Indexed keywords

BINARY MIXTURES; COMPOSITION EFFECTS; ELECTRIC BREAKDOWN OF SOLIDS; EVAPORATION; HIGH TEMPERATURE EFFECTS; HYSTERESIS; MAGNETRON SPUTTERING; NIOBIUM COMPOUNDS; SILICA; SPUTTER DEPOSITION; THIN FILMS;

HOT TARGET SPUTTERING; NIOBIUM OXIDES; THERMIONIC EMISSIONS; TOTAL DISCHARGE CURRENT; VOLTAGE INSTABILITY;

SEMICONDUCTING FILMS;

EID: 0030262617     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08559-8     Document Type: Article

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