Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode

Surface Science

Volumn 601, Issue 20 SPEC. ISS., 2007, Pages 4758-4763

  Maul, J ^a   Lin, J ^b,e   Oelsner, A ^a   Valdaitsev, D ^a   Weber, N ^c   Escher, M ^c   Merkel, M ^c   Seitz, H ^d   Heinzmann, U ^b   Kleineberg, U ^b,e   Schonhense G ^a  

^a JOHANNES GUTENBERG UNIVERSITY   (Germany)

^b BIELEFELD UNIVERSITY   (Germany)

^c Focus GmbH   (Germany)

^d Schott Lithotec AG   (Germany)

^e UNIVERSITY OF MUNICH   (Germany)

Author keywords

Defect analysis; EUV PEEM; Extreme ultraviolet lithography (EUVL); Multilayer mask blanks; Photoemission electron microscopy (PEEM)

Indexed keywords

ELECTRON MICROSCOPY; IMAGING TECHNIQUES; MASKS; PHOTOEMISSION; PHOTOLITHOGRAPHY; WAVELENGTH;

DEFECT ANALYSIS; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); MULTILAYER MASK BLANKS; PHOTOEMISSION ELECTRON MICROSCOPY (PEEM);

DEFECTS;

EID: 35148888596     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.05.041     Document Type: Article

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