A new approach for actinic defect inspection of EUVL multilayer mask blanks: Standing wave photoemission electron microscopy

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 680-683

  Neuhausler U ^a   Lin, J ^a   Oelsner, A ^b   Schicketanz, M ^c   Valdaitsev, D ^b   Slieh, J ^a   Weber, N ^c   Brzeska, M ^a   Wonisch, A ^a   Westerwalbesloh, T ^a   Brechling, A ^a   Bruckl H ^d   Escher, M ^c   Merkel, M ^c   Schonhense G ^b   Kleineberg, U ^a   Heinzmann, U ^a  

^a BIELEFELD UNIVERSITY   (Germany)

^b JOHANNES GUTENBERG UNIVERSITY   (Germany)

^c FOCUS GmbH   (Germany)

^d ARC SEIBERSDORF RESEARCH GMBH   (Austria)

Author keywords

Actinic defect inspection; EUV lithography; Multilayer mask blank; Photoemission electron microscopy

Indexed keywords

LIGHTING; OPTICAL RESOLVING POWER; OPTICS; PHOTOELECTRON SPECTROSCOPY; RADIATION;

ACTINIC DEFECT INSPECTION; EUV LITHOGRAPHY; MULTILAYER MASK BLANK; PHOTOEMISSION ELECTRON MICROSCOPY;

LITHOGRAPHY;

EID: 33646055181     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.12.035     Document Type: Article

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