Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region

IEEE Transactions on Electron Devices

Volumn 54, Issue 10, 2007, Pages 2778-2785

  Toh, Eng Huat ^a   Wang, Grace Huiqi ^a   Chan, Lap ^b   Lo, Guo Qiang ^a   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Bandgap; Impact ionization; Impact ionization MOS (I MOS); Silicon carbon; Silicon germanium; Strain; Subthreshold swing

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN OF SOLIDS; ENERGY GAP; IMPACT IONIZATION; STRAIN; TRANSCONDUCTANCE;

SILICON CARBON; SILICON GERMANIUM; SUBTHRESHOLD SWING;

MOSFET DEVICES;

EID: 35148836040     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904988     Document Type: Article

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