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Thin Solid Films

Volumn 483, Issue 1-2, 2005, Pages 158-163

Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)

(6) Zhao, Z M a Hul'Ko, O a Kim, H J a Liu, J a Shi, B a Xie, Y H a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Indium arsenide; Molecular beam epitaxy; Quantum dots; Transmission electron microscopy

Indexed keywords

ANNEALING; ARSENIC; MOLECULAR BEAM EPITAXY; PRESSURE EFFECTS; SELF ASSEMBLY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SILICON; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

BEAM EQUIVALENT PRESSURE (BEP); CAPPING; EPILAYERS; INDIUM ARSENIDE;

SIZE DETERMINATION;

EID: 18844442122 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.01.003 Document Type: Article

Times cited : (11)

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