Long wave infrared InAs-InGaAs quantum-dot infrared photodetector with high operating temperature over 170 K

Journal of Physics D: Applied Physics

Volumn 40, Issue 19, 2007, Pages 5878-5882

  Lu, Xuejun ^a   Vaillancourt, Jarrod ^a   Meisner, Mark J ^b   Stintz, Andreas ^c  

^a University of Massachusetts   (United States)

^b RAYTHEON COMPANY   (United States)

^c UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; PHOTOCONDUCTIVITY; PHOTODETECTORS; SEMICONDUCTING INDIUM COMPOUNDS;

BARRIER LAYERS; PHOTOCONDUCTIVE (PC) GAIN; QUANTUM-DOT (QD) INFRARED PHOTODETECTOR (QDIP);

SEMICONDUCTOR QUANTUM DOTS;

EID: 34748899067     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/19/013     Document Type: Article

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