Deep level defects in porous silicon

Solid State Communications

Volumn 113, Issue 9, 2000, Pages 519-522

  Lee, W H ^a   Lee, C ^a   Kwon, Y H ^b   Hong, C Y ^b   Cho, H Y ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; IONIZATION; LUMINESCENCE; PHOTOCURRENTS; POROSITY; POROUS SILICON; SPECTROSCOPIC ANALYSIS; THERMOELECTRICITY; VOLTAGE MEASUREMENT;

DEEP LEVEL DEFECTS;

SEMICONDUCTING SILICON;

EID: 0033895783     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00523-2     Document Type: Article

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