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Thin Solid Films

Volumn 312, Issue 1-2, 1998, Pages 254-258

Electron transport in porous silicon

(5) Mathur, Raminder G a,c Vivechana, a Mehra, R M a Mathur, P C a Jain, V K b

a UNIVERSITY OF DELHI (India)

b SOLID STATE PHYSICS LABORATORY (India)

c MIG Flats ^* (India)

Author keywords

Band edges; Porous silicon; Transport mechanism; VRH

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; DISSOLUTION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FERMI LEVEL; HIGH TEMPERATURE EFFECTS;

VARIABLE RANGE HOPPING (VRH);

POROUS SILICON;

EID: 0031674092 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00322-2 Document Type: Article

Times cited : (16)

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