Classification of electrical properties of porous silicon

Semiconductors

Volumn 34, Issue 3, 2000, Pages 353-357

  Zimin, S P ^a  

^a YAROSLAVL STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034146981     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187985     Document Type: Article

References (59)

1. Proceedings of International Conference "Porous Semiℏω conductors-Science and Technology," (Mallorca, Spain, 1998).
2. T. Unagami, J. Electrochem. Soc. 127, 476 (1980).
3. D. I. Bilenko, N. P. Aban'shin, Yu. N. Galishnikova, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 17, 2090 (1983) [Sov. Phys. Semicond. 17, 1336 (1983)].
4. D. I. Bilenko, N. P. Aban'shin, Yu. N. Galishnikova, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 17, 2090 (1983) [Sov. Phys. Semicond. 17, 1336 (1983)].
5. M. I. J. Beale, J. D. Benjamin, M. J. Uren, et al., J. Cryst. Growth 73, 622 (1985).
6. R. C. Anderson, R. S. Muller, and C. W. Tobias, J. Electrochem. Soc. 138, 3406 (1991).
7. A. J. Read, R. J. Needs, K. J. Nash, et al., Phys. Rev. Lett. 69, 1232 (1992).
8. R. Tsu and D. Babic, Appl. Phys. Lett. 64, 1806 (1994).
9. V. Lehmann, F. Hofmann, F. Muller, et al., Thin Solid Films 255, 20 (1995).
10. A. Richter, P. Steiner, F. Kozlowsky, et al., IEEE Electron Device Lett. 12, 691 (1991).
11. Properties of Porous Silicon, No. 18, Ed. by L. Canham (DERA, Malvern, 1997).
12. L. A. Balagurov, Materialoved. Fiz. Khim. Kondens. Sred., No. 1, 50 (1998); L. A. Balagurov, Materialoved., No. 3, 23 (1998).
13. L. A. Balagurov, Materialoved. Fiz. Khim. Kondens. Sred., No. 1, 50 (1998); L. A. Balagurov, Materialoved., No. 3, 23 (1998).
14. M. Ben-Chorin, F. Moller, F. Koch, et al., Phys. Rev. B 51, 2199 (1995).
15. A. J. Simmons, T. I. Cox, M. J. Uren, et al., Thin Solid Films 255, 12 (1995).
16. C. Peng, K. D. Hirschman, and P. M. Fauchet, J. Appl. Phys. 80, 295 (1996).
17. N. S. Averkiev and A. Ya. Shik, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 199 (1996) [Semiconductors 30, 112 (1995)].
18. N. S. Averkiev and A. Ya. Shik, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 199 (1996) [Semiconductors 30, 112 (1995)].
19. N. S. Averkiev, L. M. Kapitonova, A. A. Lebedev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 2178 (1996) [Semiconductors 30, 1135 (1996)].
20. N. S. Averkiev, L. M. Kapitonova, A. A. Lebedev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 2178 (1996) [Semiconductors 30, 1135 (1996)].
21. V. Yu. Timoshenko, E. A. Konstantinova, and E. Dietrich, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 613 (1998) [Semiconductors 32, 549 (1998)].
22. V. Yu. Timoshenko, E. A. Konstantinova, and E. Dietrich, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 613 (1998) [Semiconductors 32, 549 (1998)].
23. S. P. Zimin, Pis'ma Zh. Tekh. Fiz. 21 (24), 46 (1995) [Tech. Phys. Lett. 21, 1015 (1995)].
24. S. P. Zimin, Pis'ma Zh. Tekh. Fiz. 21 (24), 46 (1995) [Tech. Phys. Lett. 21, 1015 (1995)].
25. C. Cadet, D. Deresmes, D. Vuillaume, et al., Appl. Phys. Lett. 64, 2827 (1994).
26. S. P. Zimin and E. P. Komarov, Pis'ma Zh. Tekh. Fiz. 24 (6), 45 (1998) [Tech. Phys. Lett. 24, 226 (1998)].
27. S. P. Zimin and E. P. Komarov, Pis'ma Zh. Tekh. Fiz. 24 (6), 45 (1998) [Tech. Phys. Lett. 24, 226 (1998)].
28. S. P. Zimin and A. N. Bragin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 476 (1999) [Semiconductors 33, 457 (1999)].
29. S. P. Zimin and A. N. Bragin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 476 (1999) [Semiconductors 33, 457 (1999)].
30. S. P. Zimin, Pis'ma Zh. Tekh. Fiz. 20 (7), 55 (1994) [Tech. Phys. Lett. 20, 285 (1994)].
31. S. P. Zimin, Pis'ma Zh. Tekh. Fiz. 20 (7), 55 (1994) [Tech. Phys. Lett. 20, 285 (1994)].
32. E. A. Ponomarev, P. Cowache, and C. Levy-Clement, in Proceedings of International Conference "Porous Semiconductors - Science and Technology," (Mallorca, Spain, 1998), p. 23.
33. A. L. Vinke, S. P. Zimin, and V. H. Palashov, RF Patent No. 2054746(1996).
34. F. P. Romstad and E. Veje, Phys. Rev. B: Condens. Matter 55, 5220 (1997).
35. W. H. Lee, C. Lee, and J. Lang, J. Non-Cryst. Solids 198, 911 (1996).
36. Y. Libianiker, I. Balberg, J. Partee, et al., J. Non-Cryst. Solids 198, 949 (1996).
37. Y. Libianiker and I. Balberg, Phys. Rev. Lett. 78, 2433 (1997).
38. S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 15 (1997) [Semiconductors 31, 11 (1997)].
39. S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 15 (1997) [Semiconductors 31, 11 (1997)].
40. L. V. Belyakov, T. L. Makarova, V. I. Sakharov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 1122 (1998) [Semiconductors 32, 1003 (1998)].
41. L. V. Belyakov, T. L. Makarova, V. I. Sakharov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 1122 (1998) [Semiconductors 32, 1003 (1998)].
42. S. P. Zimin and E. P. Komarov, Izv. Vyssh. Uchebn. Zaved., Élektron., No. 3, 48 (1998).
43. V. M. Demidovich, G. B. Demidovich, S. N. Kozlov, et al., Pis'ma Zh. Tekh. Fiz. 24 (2), 17 (1998) [Tech. Phys. Lett. 24, 53 (1998)].
44. V. M. Demidovich, G. B. Demidovich, S. N. Kozlov, et al., Pis'ma Zh. Tekh. Fiz. 24 (2), 17 (1998) [Tech. Phys. Lett. 24, 53 (1998)].
45. E. H. Rhoderick, Metal-Semiconductor Contacts (Clarendon, Oxford, 1978; Radio i Svyaz', Moscow, 1982).
46. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984).
47. S. P. Zimin, V. S. Kuznetsov, and A. V. Prokaznikov, Appl. Surf. Sci. 91, 355 (1995).
48. V. V. Chistyakov, S. P. Zimin, and A. L. Vinke, RF Patent No. 2065226 (1996).
49. N. J. Pulsford, G. L. J. A. Rikken, Y. A. R. R. Kessener, et al., J. Lumin. 57, 181 (1993).
50. M. Ben-Chorin, F. Moller, and F. Koch, J. Appl. Phys. 77, 4482 (1995).
51. D. V. Dimitrov, Phys. Rev. B 51, 1562 (1995).
52. P. H. Hao, X. Y. Hou, F. L. Zhang, et al., Appl. Phys. Lett. 64, 3602 (1994).
53. D. Dimova-Malinovska, M. Tzolov, N. Tzenov, et al., Thin Solid Films 297, 285 (1997).
54. Th. Dittrich, J. Rappich, and V. Yu. Timoshenko, Appl. Phys. Lett. 70, 2705 (1997).
55. L. A. Balagurov, D. G. Yarkin, G. A. Petrovicheva, et al., J. Appl. Phys. 82, 4647 (1997).
56. É. B. Kaganovich, É. G. Manoǐlov, and S. V. Svechnikov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 327 (1999) [Semiconductors 33, 327 (1999)].
57. É. B. Kaganovich, É. G. Manoǐlov, and S. V. Svechnikov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 327 (1999) [Semiconductors 33, 327 (1999)].
58. M. Ben-Chorin, F. Moller, and F. Koch, Phys. Rev. B: Condens. Matter 49, 2981 (1994).
59. S. P. Zimin, E. P. Komarov, and Yu. V. Ryabkin, Izv. Vyssh. Uchebn. Zaved., Élektron. (1999) (in press).