Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon/crystalline-silicon heterojunction measured versus sample temperature

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 12, 1998, Pages 8020-8024

  Frederiksen, J ^a   Melcher, P ^a   Veje, E ^a  

^a UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343102913     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.8020     Document Type: Article

References (18)

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. D. A. B. Miller, Nature (London) 384, 307 (1996).
3. K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, Nature (London) 384, 338 (1996).
4. R. T. Collins, P. M. Fauchet, and M. A. Tischler, Phys. Today 50 (1), 24 (1997).
5. Y. Kanemitsu, Phys. Rep. 263, 1 (1995).
6. G. C. John and V. A. Singh, Phys. Rep. 263, 93 (1995).
7. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
8. O. K. Andersen and E. Veje, Phys. Rev. B 53, 15 643 (1996).
9. E. Veje, A. Ferreira da Silva, K.-F. Berggren, I. Pepe, and A. V. Batista da Silva, Proc. Electrochem. Soc. 97-7, 242 (1997).
10. R. C. Egeberg, E. Veje, A. Ferreira da Silva, I. Pepe, and A. Santos Alves, J. Porous Mater. (to be published).
11. J. L. Gole, F. P. Dudel, D. Grantier, and D. A. Dixon, Phys. Rev. B 56, 2137 (1997).
12. F. P. Romstad and E. Veje, Phys. Rev. B 55, 5220 (1997).
13. Properties of Porous Silicon, edited by L. Canham, EMIS Datareview Series No. 18 (INSPEC, London, 1997), Chapters 6, 7, and 10.
14. C. D. Thurmond, J. Electrochem. Soc. 122, 1133 (1975).
15. and as quoted in G. E. Jellison, Jr., and D. H. Lowndes, Appl. Phys. Lett. 41, 594 (1982).
16. Appl. Phys. Lett.in N. Do, L. Klees, P. T. Leung, F. Tong, W. P. Leung, and A. C. Tam, 60, 2186 (1992).
17. N. E. Christensen, Phys. Rev. B 38, 12 687 (1988).
18. K. J. Malloy and J. A. Van Vechten, J. Vac. Sci. Technol. B 9, 2212 (1991).