The effect of metal-film thickness on pattern formation by using direct imprint

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 B, 2007, Pages 6382-6386

  Cheng, Ming Chieh ^a   Hsiung, Hsin Yi ^a   Lu, Ying Ti ^a   Sung, Cheng Kuo ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Direct imprint; Formation mechanism; Metal film thickness; Molecular dynamics simulation

Indexed keywords

COMPUTER SIMULATION; DEFECTS; METALLIC FILMS; MOLECULAR DYNAMICS; SUBSTRATES;

DIRECT IMPRINT; FORMATION MECHANISM; METAL-FILM THICKNESS; MOLECULAR DYNAMICS SIMULATION;

FILM THICKNESS;

EID: 34648819036     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6382     Document Type: Article

References (24)

1. Y. Xia and G. M. Whitesides: Angew. Chem., Int. Ed. 37 (1998) 550.
2. Y. C. Stephen, R. K. Peter, and J. R. Preston: Appl. Phys. Lett. 67 (1995) 3114.
3. S. Y. Chou, P. R. Krauss, W. Zhang, L. Guo, and L. Zhuang: J. Vac. Sci. Technol. B 15 (1997) 2897.
4. J. J. Wang, J. Deng, X. Deng, F. Liu, P. Sciortino, L. Chen, A. Nikolov, and A. Graham: IEEE J. Sel. Top. Quantum. Electron. 11 (2005) 241.
5. J. Tao, Y. Chen, X. Zhao, A. Malik, and Z. Cui: Microelectron. Eng. 78-79 (2005) 665.
6. S.-W. Ahn, K.-D. Lee, J.-S. Kim, S. H. Kim, J.-D. Park, S.-H. Lee, and P.-W. Yoon: Nanotechnology 16 (2005) 1874.
7. S.-W. Ahn, K.-D. Lee, J.-S. Kim, S. H. Kim, S. H. Lee, J.-D. Park, and P.-W. Yoon: Microelectron. Eng. 78-79 (2005) 314.
8. D. C. Flanders and A. E. White: J. Vac. Sci. Technol. 19 (1981) 892.
9. K. A. Lister, S. Thorns, D. S. Macintyre, C. D. W. Wilkinson, J. M. R. Weaver, and B. G. Casey: J. Vac. Sci. Technol. B 22 (2004) 3257.
10. H. C. Cheng, S. Y. Chuang, H. L. Chen, Y. L. Hung, and F. H. Ko: Dig. Pap. Microprocesses and Nanotechnology Conf., 2004, p. 138.
11. J. Shimizu, H. Eda, M. Yoritsune, and E. Ohmura: Nanotechnology 9 (1998) 118.
12. V. V. Pokropivny, V. V. Skorokhod, and A. V. Pokropivny: Mater. Lett. 31 (1997) 49.
13. K. Maekawa and A. Itoh: Wear 188 (1995) 115.
14. J. A. Harrison, R. J. Colton, C. T. White, and D. W. Brenner: Wear 168 (1993) 127.
15. D. Mulliah, S. D. Kenny, S. Roger, and C. F. Sanz-Navarro: Nanotechnology 15 (2004) 243.
16. D. Mulliah, S. D. Kenny, and R. Smith: Phys. Rev. B 69 (2004) 205407.
17. R. Komanduri, N. Chandrasekaran, and L. M.. Raff: Phys. Rev. B 61 (2000) 14007.
18. J. M. Haile: in Molecular Dynamics Simulation: Elementary Methods (John Wiley & Sons, New York, 1992) pp. 160 and 206.
19. L. A. Girifalco and V. G. Weizer: Phys. Rev. 114 (1959) 687.
20. T. Iwaki: JSME Int. J., Ser. A 39 (1996) 346.
21. N. Miyazaki, and Y. Shiozaki: JSME Int. J., Ser. A 39 (1996) 606.
22. S. Suresh: Nat. Mater. 5 (2006) 253.
23. S. Suresh, T. G. Nieh, and B. W. Choi: Ser. Mater. 41 (1999) 951.
24. R. E. Reed-Hill and R. Abbaschian: in Physical Metallurgy Principles (Thomson-Engineering, Boston, 1972) 3rd ed., p. 145.