Room temperature nanoimprint lithography using a bilayer of HSQ/PMMA resist stack

Microelectronic Engineering

Volumn 78-79, Issue 1-4, 2005, Pages 665-669

  Tao, Jiarui ^a,b   Chen, Yifang ^a   Zhao, Xingzhong ^b   Malik, Adnan ^a   Cui, Zheng ^a  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b WUHAN UNIVERSITY   (China)

Author keywords

Electron beam lithography; Hydrogen silsequioxane; Pattern placement error; PMMA; Reactive ion etch; Room temperature nanoimprint lithography; Thermal expansion

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ERROR ANALYSIS; HEAT TREATMENT; REACTIVE ION ETCHING; SUBSTRATES; THERMAL EXPANSION;

HYDROGEN SILSEQUIOXANE; PATTERN PLACEMENT ERRORS; PMMA; ROOM TEMPERATURE NANOIMPRINT LITHOGRAPHY;

NANOTECHNOLOGY;

EID: 14944378090     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.12.082     Document Type: Conference Paper

References (5)

1. A. Lebib, and Y. Chen Micro Nano Eng. 61-62 2002 371
2. D. Pisignano, L. Persano, M.F. Raganato, P. Visconti, and R. Cingolani Adv. Mater. 16 2004 525
3. S. Matsui, Y. Igaku, and H. Ishigaki J. Vac. Sci. Technol. 21 2003 688
4. Y. Chen, Kaiwu Peng, and Zheng Cui Micro Nano Eng. 73-74 2003 278
5. Y. Chen, D.S. Macintyre, E. Boyd, D. Moran, I. Thayne, and S. Thoms Micro Nano Eng. 59-60 2002 189