Evaluation of GaN and In0.2Ga0.8N semiconductors as potentiometric anion selective electrodes

Electroanalysis

Volumn 19, Issue 17, 2007, Pages 1799-1806

  Dimitrova, Rozalina ^a   Catalan, Lionel ^a   Alexandrov, Dimiter ^a   Chen, Aicheng ^a  

^a LAKEHEAD UNIVERSITY   (Canada)

Author keywords

Anion selective electrodes; Etching; GaN; In0.2Ga 0.8N; pH sensitivity

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ELECTRODES; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NEGATIVE IONS; POTASH; POTASSIUM NITRATE; POTENTIOMETERS (ELECTRIC MEASURING INSTRUMENTS); SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS;

ANION SELECTIVE ELECTRODES; ELECTRODE SURFACES; ELECTROLYTE SOLUTIONS; IN0.2GA 0.8N; LINEAR RANGE; LINEAR REGION; PH RANGE; PH VARIATION; PH-SENSITIVITY; POTENTIOMETRICS;

ELECTROLYTES;

EID: 34548724445     PISSN: 10400397     EISSN: 15214109     Source Type: Journal    
DOI: 10.1002/elan.200703936     Document Type: Article

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