DFT calculations of NH3 adsorption and dissociation on gallium-rich GaAs(0 0 1)-4 × 2 surface

Chemical Physics Letters

Volumn 445, Issue 4-6, 2007, Pages 188-192

  Lu, Hong Liang ^a   Chen, Wei ^a   Ding, Shi Jin ^a   Zhang, David Wei ^a   Wang, Li Kang ^a  

^a ASIC and System   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ARSENIC; DENSITY FUNCTIONAL THEORY; DISSOCIATION; HYDROGEN; OPTIMIZATION; POTENTIAL ENERGY SURFACES;

ADSORPTION ENERGY; DATIVE BONDS; REACTION PATHS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34548379521     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2007.08.008     Document Type: Article

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