Structure and optical properties of (0 0 1)GaAs surfaces nitrided in plasma-assisted NH 3 gas

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 436-441

  Shimaoka, G ^a   Aoki, T ^a   Nakanishi, Y ^a   Hatanaka, Y ^a   Udagawa, T ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b High Performance Materials Department   (Japan)

Author keywords

GaAs; GaN; GaNAs; PL; Plasma assisted nitridation; RHEED

Indexed keywords

AMMONIA; ARGON; AUGER ELECTRON SPECTROSCOPY; CRYSTAL ORIENTATION; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM NITRIDE; NITRIDING; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SPUTTERING; SURFACE PHENOMENA; SURFACE STRUCTURE;

PLASMA ASSISTED NITRIDATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035873638     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00097-6     Document Type: Article

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