-
1
-
-
0000274472
-
GaSb Booster Cells for Over 30% Efficient Solar-Cell Stacks
-
Frass, L. M., Girard, G. R., Avery, B. A., Arau, V. S., Sundaram, V. S., Tompson, S. M., and Gee, J. M., 1989, "GaSb Booster Cells for Over 30% Efficient Solar-Cell Stacks," J. Appl. Phys., 66(8), pp. 3866-3870.
-
(1989)
J. Appl. Phys
, vol.66
, Issue.8
, pp. 3866-3870
-
-
Frass, L.M.1
Girard, G.R.2
Avery, B.A.3
Arau, V.S.4
Sundaram, V.S.5
Tompson, S.M.6
Gee, J.M.7
-
2
-
-
4043156466
-
GaSb Based Solar Cells for Concentrator Tandem Application
-
Nice, France, pp
-
Khvostikov, V. P., Sorokina, S. V., and Shvarts, M. Z., 1995, "GaSb Based Solar Cells for Concentrator Tandem Application," Proc. 13th European Photovoltaic Solar Energy Conference and Exhibition, Nice, France, pp. 61-64.
-
(1995)
Proc. 13th European Photovoltaic Solar Energy Conference and Exhibition
, pp. 61-64
-
-
Khvostikov, V.P.1
Sorokina, S.V.2
Shvarts, M.Z.3
-
3
-
-
0032593270
-
III-V Compounds for Solar Cell Applications
-
Bett, A. W., Dimroth, F., Stollwerck, G., and Sulima, O. V., 1999, "III-V Compounds for Solar Cell Applications," Appl. Phys. A, 69, pp. 119-129.
-
(1999)
Appl. Phys. A
, vol.69
, pp. 119-129
-
-
Bett, A.W.1
Dimroth, F.2
Stollwerck, G.3
Sulima, O.V.4
-
4
-
-
11644285620
-
GaSb/InGaAsSb Tandem Thermophotovoltaic Cells for Space Applications
-
Tarragona, Spain, pp
-
Shvarts, M. Z., Andreev, V. M., Khvostikov, V. P., Larionov, V. R., Rumyantsev, V. D., Sorokina, S. V., Vasil'ev, V. I., Vlasov, A. S., and Chosta, O. I., 1998, "GaSb/InGaAsSb Tandem Thermophotovoltaic Cells for Space Applications," Proc. 5th European Space Power Conference, Tarragona, Spain, pp. 527-532.
-
(1998)
Proc. 5th European Space Power Conference
, pp. 527-532
-
-
Shvarts, M.Z.1
Andreev, V.M.2
Khvostikov, V.P.3
Larionov, V.R.4
Rumyantsev, V.D.5
Sorokina, S.V.6
Vasil'ev, V.I.7
Vlasov, A.S.8
Chosta, O.I.9
-
5
-
-
34548250344
-
-
Martin, D., and Algora, C., 2004, Theoretical Comparison Between Diffused and Epitaxial GaSb TPV Cells, Proc. 6th Conference on Thermophotovoltaic Generation of Electricity, Freiburg, Germany, A. Gopinath et al., eds., American Institute of Physics, Melville, NY, pp. 311-319.
-
Martin, D., and Algora, C., 2004, "Theoretical Comparison Between Diffused and Epitaxial GaSb TPV Cells," Proc. 6th Conference on Thermophotovoltaic Generation of Electricity, Freiburg, Germany, A. Gopinath et al., eds., American Institute of Physics, Melville, NY, pp. 311-319.
-
-
-
-
6
-
-
0346424926
-
Observations of Microfacets Near Irregularly Remelted Surfaces in Pulled GaSb Crystals
-
Kumagawa, M., 1978, "Observations of Microfacets Near Irregularly Remelted Surfaces in Pulled GaSb Crystals," J. Cryst. Growth, 44(3), pp. 291-296.
-
(1978)
J. Cryst. Growth
, vol.44
, Issue.3
, pp. 291-296
-
-
Kumagawa, M.1
-
7
-
-
0038265719
-
A Novel Encapsulant Material for LEC Growth of GaSb
-
Miyazawa, S., Kondo, S., and Naganuma, M., 1980, "A Novel Encapsulant Material for LEC Growth of GaSb," J. Cryst. Growth, 49(4), pp. 670-674.
-
(1980)
J. Cryst. Growth
, vol.49
, Issue.4
, pp. 670-674
-
-
Miyazawa, S.1
Kondo, S.2
Naganuma, M.3
-
8
-
-
0002914677
-
Direct Synthesis and Crystallization of GaSb
-
Hársy, M., Görög, T., Lendvay, E., and Koltai, F., 1981, "Direct Synthesis and Crystallization of GaSb," J. Cryst. Growth, 53(2), pp. 234-238.
-
(1981)
J. Cryst. Growth
, vol.53
, Issue.2
, pp. 234-238
-
-
Hársy, M.1
Görög, T.2
Lendvay, E.3
Koltai, F.4
-
9
-
-
0002918681
-
Low Dislocation Density GaSb Single Crystals Grown by LEC Technique
-
Kondo, S., and Miyazawa, S., 1982, "Low Dislocation Density GaSb Single Crystals Grown by LEC Technique," J. Cryst. Growth, 56(1), pp. 39-44.
-
(1982)
J. Cryst. Growth
, vol.56
, Issue.1
, pp. 39-44
-
-
Kondo, S.1
Miyazawa, S.2
-
10
-
-
0013143530
-
-
Ohmori, Y., Sugii Shin-ichi Akai, K., and Matsumoto, K., 1982, LEC Growth of Te-Doped GaSb Single Crystals With Uniform Carrier Concentration Distribution, J. Cryst. Growth, 60(1), pp. 79-85.
-
Ohmori, Y., Sugii Shin-ichi Akai, K., and Matsumoto, K., 1982, "LEC Growth of Te-Doped GaSb Single Crystals With Uniform Carrier Concentration Distribution," J. Cryst. Growth, 60(1), pp. 79-85.
-
-
-
-
11
-
-
0013049193
-
Czochralski Growth and Characterization of GaSb
-
Sunder, W. A., Barns, R. L., Kometani, T. Y., Parsey, J. M., and Laudise, R. A. Jr., 1986, "Czochralski Growth and Characterization of GaSb," J. Cryst. Growth, 78(1), pp. 9-18.
-
(1986)
J. Cryst. Growth
, vol.78
, Issue.1
, pp. 9-18
-
-
Sunder, W.A.1
Barns, R.L.2
Kometani, T.Y.3
Parsey, J.M.4
Laudise Jr., R.A.5
-
12
-
-
0026908749
-
Characterization of Extended Defects in Highly Te-Doped (111) GaSb Single Crystals Grown by the Czochralski Technique
-
Doerschel, J., and Geissler, U., 1992, "Characterization of Extended Defects in Highly Te-Doped (111) GaSb Single Crystals Grown by the Czochralski Technique," J. Cryst. Growth, 121(4), pp. 781-789.
-
(1992)
J. Cryst. Growth
, vol.121
, Issue.4
, pp. 781-789
-
-
Doerschel, J.1
Geissler, U.2
-
13
-
-
0027557973
-
GaSb Solution Growth by the Solute Feeding Czochralski Method
-
Watanabe, A., Tanaka, A., and Sukegawa, T., 1993, "GaSb Solution Growth by the Solute Feeding Czochralski Method," J. Cryst. Growth, 128(1-4), pp. 462-465.
-
(1993)
J. Cryst. Growth
, vol.128
, Issue.1-4
, pp. 462-465
-
-
Watanabe, A.1
Tanaka, A.2
Sukegawa, T.3
-
14
-
-
0032597748
-
Bridgman Crystal Growth and Defect Formation in GaSb
-
Boiton, P., Giacometti, N., Duffar, T., Santailler, J. L., Dusserre, P., and Nabot, J. P., 1999, "Bridgman Crystal Growth and Defect Formation in GaSb," J. Cryst. Growth, 206(3), pp. 159-165.
-
(1999)
J. Cryst. Growth
, vol.206
, Issue.3
, pp. 159-165
-
-
Boiton, P.1
Giacometti, N.2
Duffar, T.3
Santailler, J.L.4
Dusserre, P.5
Nabot, J.P.6
-
15
-
-
0034832552
-
Growth of GaSb Single Crystals by an Improved Dewetting Process
-
Duffar, T., Dusserre, P., and Giacometti, N., 2001, "Growth of GaSb Single Crystals by an Improved Dewetting Process," J. Cryst. Growth, 223(1-2), pp. 69-72.
-
(2001)
J. Cryst. Growth
, vol.223
, Issue.1-2
, pp. 69-72
-
-
Duffar, T.1
Dusserre, P.2
Giacometti, N.3
-
17
-
-
0032138632
-
Nearly Diffusion Controlled Segregation of Tellurium in GaSb
-
Dutta, P. S., and Ostrogorsky, A. G., 1998, "Nearly Diffusion Controlled Segregation of Tellurium in GaSb," J. Cryst. Growth, 191(4), pp. 904-908.
-
(1998)
J. Cryst. Growth
, vol.191
, Issue.4
, pp. 904-908
-
-
Dutta, P.S.1
Ostrogorsky, A.G.2
-
18
-
-
0036130910
-
Te Distribution in Space Grown GaSb
-
Voloshin, A. E., Nishinaga, T., Ge, P., and Huo, C., 2002, "Te Distribution in Space Grown GaSb," J. Cryst. Growth, 234(1), pp. 12-24.
-
(2002)
J. Cryst. Growth
, vol.234
, Issue.1
, pp. 12-24
-
-
Voloshin, A.E.1
Nishinaga, T.2
Ge, P.3
Huo, C.4
-
19
-
-
0347071729
-
Properties of Tellurium-Doped Gallium Antimonide Single Crystals Grown From Nonstoichiometric Melt
-
Kunitsyn, A. E., Chaldyshev, V. V., Mil'vidskaya, A. G., and Mil'vidskii, M. G., 1997, "Properties of Tellurium-Doped Gallium Antimonide Single Crystals Grown From Nonstoichiometric Melt," Semiconductors, 31(8), pp. 806-808.
-
(1997)
Semiconductors
, vol.31
, Issue.8
, pp. 806-808
-
-
Kunitsyn, A.E.1
Chaldyshev, V.V.2
Mil'vidskaya, A.G.3
Mil'vidskii, M.G.4
-
20
-
-
3242672724
-
Enhancement of Infrared Transmission in GaSb Bulk Crystals by Carrier Compensation
-
Pino, R., Ko, Y., and Dutta, P. S., 2004, "Enhancement of Infrared Transmission in GaSb Bulk Crystals by Carrier Compensation," J. Appl. Phys., 96(2), pp. 1064-1067.
-
(2004)
J. Appl. Phys
, vol.96
, Issue.2
, pp. 1064-1067
-
-
Pino, R.1
Ko, Y.2
Dutta, P.S.3
-
21
-
-
0035247258
-
Ellipsometric Investigations of (100) GaSb Surface under Chemical Etching and Sulfide Treatment
-
Papis, E., Kudla, A., Piotrowski, T. T., Golaszewska, K., Kaminska, E., and Piotrowska, A., 2001, "Ellipsometric Investigations of (100) GaSb Surface under Chemical Etching and Sulfide Treatment," Mater. Sci. Semicond. Process., 4, pp. 293-295.
-
(2001)
Mater. Sci. Semicond. Process
, vol.4
, pp. 293-295
-
-
Papis, E.1
Kudla, A.2
Piotrowski, T.T.3
Golaszewska, K.4
Kaminska, E.5
Piotrowska, A.6
-
22
-
-
34548217596
-
-
Schegl, T., Sulima, O. V., and Bett, A. W., 2004, The Influence of Surface Preparation on Zn Diffusion Processes in GaSb, Proc. 6th Conference on Thermophotovoltaic Generation of Electricity, Freiburg, Germany, A. Gopinath et al., eds., American Institute of Physics, Melville, NY, pp. 396-403.
-
Schegl, T., Sulima, O. V., and Bett, A. W., 2004, "The Influence of Surface Preparation on Zn Diffusion Processes in GaSb," Proc. 6th Conference on Thermophotovoltaic Generation of Electricity, Freiburg, Germany, A. Gopinath et al., eds., American Institute of Physics, Melville, NY, pp. 396-403.
-
-
-
-
23
-
-
0346053288
-
Photoluminescence of the GaSb for Large Level Stimulation
-
Kyuregyan, A. S., Lazareva, I. K., Stuchebnikov, V. M., and Yunovich, A. E., 1972, "Photoluminescence of the GaSb for Large Level Stimulation," Sov. Phys. Semicond., 6(2), pp. 242-247.
-
(1972)
Sov. Phys. Semicond
, vol.6
, Issue.2
, pp. 242-247
-
-
Kyuregyan, A.S.1
Lazareva, I.K.2
Stuchebnikov, V.M.3
Yunovich, A.E.4
-
24
-
-
0030645405
-
Characteristics of GaSb Growth Using Various Gallium and Antimony Precursors
-
Wang, C. A., Salim, S., Jensen, K. F., and Jones, A. C., 1997, "Characteristics of GaSb Growth Using Various Gallium and Antimony Precursors," J. Cryst. Growth, 170, pp. 55-60.
-
(1997)
J. Cryst. Growth
, vol.170
, pp. 55-60
-
-
Wang, C.A.1
Salim, S.2
Jensen, K.F.3
Jones, A.C.4
-
25
-
-
0348046459
-
Preparation of GaSb Substrates for GaSb and GaInAsSb Growth by Organometallic Vapor Phase Epitaxy
-
Wang, C. A., Shiau, D. A., and Lin, A., 2004, "Preparation of GaSb Substrates for GaSb and GaInAsSb Growth by Organometallic Vapor Phase Epitaxy," J. Cryst. Growth, 261, pp. 385-392.
-
(2004)
J. Cryst. Growth
, vol.261
, pp. 385-392
-
-
Wang, C.A.1
Shiau, D.A.2
Lin, A.3
-
26
-
-
0031549493
-
Study of Zn Diffusion into GaSb from the Vapour and Liquid Phase
-
Bett, A. W., Kesser, S., and Sulima, O. V., 1997, "Study of Zn Diffusion into GaSb from the Vapour and Liquid Phase," J. Cryst. Growth, 181, pp. 9-16.
-
(1997)
J. Cryst. Growth
, vol.181
, pp. 9-16
-
-
Bett, A.W.1
Kesser, S.2
Sulima, O.V.3
-
27
-
-
0035254388
-
Fabrication and Simulation of GaSb Thermophotovoltaic Cells
-
Sulima, O. V., and Bett, A. W., 2001, "Fabrication and Simulation of GaSb Thermophotovoltaic Cells," Sol. Energy Mater. Sol. Cells, 66, pp. 533-540.
-
(2001)
Sol. Energy Mater. Sol. Cells
, vol.66
, pp. 533-540
-
-
Sulima, O.V.1
Bett, A.W.2
-
28
-
-
34548267503
-
-
Simcock, M. N., Santailler, J.-L., Dusserre, P., and Giacometti, N., 2004, Zinc Diffusion in GaSb for Thermophotovoltaic Cell Applications, Proc. 6th Conference on Thermophotovoltaic Generation of Electricity, Freiburg, Germany, A. Gopinath et al., eds., American Institute of Physics, Melville, NY, pp. 303-309.
-
Simcock, M. N., Santailler, J.-L., Dusserre, P., and Giacometti, N., 2004, "Zinc Diffusion in GaSb for Thermophotovoltaic Cell Applications," Proc. 6th Conference on Thermophotovoltaic Generation of Electricity, Freiburg, Germany, A. Gopinath et al., eds., American Institute of Physics, Melville, NY, pp. 303-309.
-
-
-
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