Enhancement of infrared transmission in GaSb bulk crystals by carrier compensation

Journal of Applied Physics

Volumn 96, Issue 2, 2004, Pages 1064-1067

  Pino, R ^a   Ko, Y ^a   Dutta, P S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CRYSTALS; CARRIER COMPENSATION; INFRARED TRANSMISSIONS; INTERSUBBAND ABSORPTION;

CRYSTAL GROWTH FROM MELT; CRYSTALS; INTERFACES (MATERIALS); IONIZATION; LATTICE VIBRATIONS; MOLECULAR BEAM EPITAXY; PHONONS; RAMAN SCATTERING; SEMICONDUCTOR DOPING; SUBSTRATES; TELLURIUM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 3242672724     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1738527     Document Type: Article

References (14)

1. A. G. Milnes and A. Y. Polyakov, Solid-State Electron. 36, 803 (1993).
2. P. S. Dutta, H. L. Bhat, and Vikram Kumar, J. Appl. Phys. 81, 5821 (1997).
3. H. Xie, J. Piao, J. Katz, and W. I. Wang, J. Appl. Phys. 70, 3152 (1991).
4. C. Mailhiot and D. L. Smith, J. Vac. Sci. Technol. A 7, 445 (1989).
5. H. J. Hrostowski and C. S. Fuller, J. Phys. Chem. Solids 4, 155 (1958).
6. R. D. Baxter, R. T. Bate, and F. J. Reid, J. Phys. Chem. Solids 26, 41 (1965).
7. R. Ferrini, M. Galli, G. Guizzetti, M. Patrini, A. Bosacchi, S. Franchi, and R. Magnanini, Phys. Rev. B 56, 7549 (1997).
8. P. S. Dutta and A. G. Ostrogorsky, J. Cryst. Growth 197, 749 (1999).
9. Alan J. Strauss, Phys. Rev. 121, 1087 (1961).
10. T. O. Yep and W. M. Becker, J. Appl. Phys. 37, 456 (1966).
11. R. D. Baxter and F. J. Reid, Bull. Am. Phys. Soc. 10, 599 (1965).
12. S. S. Mitra, Phys. Rev. 132, 986 (1963).
13. O. H. Nielsen, F. K. Larsen, S. Damgaard, J. W. Petersen, and G. Weyer, Z. Phys. B: Condens. Matter 52, 99 (1983).
14. GaSb, Basic Parameters, http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaSb/