Bridgman crystal growth and defect formation in GaSb

Journal of Crystal Growth

Volumn 206, Issue 3, 1999, Pages 159-165

  Boiton, P ^a   Giacometti, N ^a   Duffar, T ^a   Santailler, J L ^a   Dusserre, P ^a   Nabot, J P ^a  

^a CEREM/DEM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRONIC PROPERTIES; ENCAPSULATION; MOLTEN MATERIALS; SALTS; SINGLE CRYSTALS; STRESS ANALYSIS; THERMAL EFFECTS; THERMAL GRADIENTS; TWINNING;

GALLIUM ANTIMONIDE; VERTICAL BRIDGMAN METHOD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032597748     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00333-4     Document Type: Article

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