Nearly diffusion controlled segregation of tellurium in GaSb

Journal of Crystal Growth

Volumn 191, Issue 4, 1998, Pages 904-908

  Dutta, Partha S ^a   Ostrogorsky, Aleksandar G ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

GaSb; Segregation; Single crystals; Submerged baffle

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; MOLTEN MATERIALS; PHASE INTERFACES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING; SINGLE CRYSTALS; TELLURIUM;

GALLIUM ANTIMONIDE; SUBMERGED BAFFLE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032138632     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00440-0     Document Type: Article

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