LEC growth of Te-doped GaSb single crystals with uniform carrier concentration distribution

Journal of Crystal Growth

Volumn 60, Issue 1, 1982, Pages 79-85

  Ohmori, Yutaka ^a   Sugii, Kiyomasa ^a   Akai, Shin ichi ^b   Matsumoto, Kazuhisa ^b  

^a NTT CORPORATION   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013143530     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(82)90174-9     Document Type: Article

References (11)

1. Ga<inf>1-x</inf>Al<inf>x</inf>Sb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients
2. Temperature Dependence of the Threshold Current of AlGaAsSb/GaSb DH Lasers
3. A novel encapsulant material for LEC growth of GaSb
4. Observation of Growth Striations in Undoped GaSb Single Crystals
5. Investigation of impurity variations by cathodoluminescence imaging: Application to GaSb:Te