Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt

Semiconductors

Volumn 31, Issue 8, 1997, Pages 806-808

  Kunitsyn, A E ^a   Chaldyshev, V V ^a   Mil'vidskaya, A G ^b   Mil'vidskii M G ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b State Institute of Research and Design of the Rare Metals Industry   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347071729     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187256     Document Type: Article

References (12)

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