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Journal of Crystal Growth

Volumn 234, Issue 1, 2002, Pages 12-24

Te distribution in space grown GaSb

(4) Voloshin, A E a Nishinaga, T b Ge, P c Huo, C c

a SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY (Russian Federation)

b MEIJO UNIVERSITY (Japan)

c INSTITUTE OF PHYSICS (China)

Author keywords

A1. Convection; A1. Impurities; A1. Planar defects; A1. X ray topography; A2. Gradient freeze technique; A2. Microgravity conditions; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL IMPURITIES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; TELLURIUM; TWINNING; X RAY ANALYSIS;

X-RAY TOPOGRAPY;

CRYSTAL GROWTH;

EID: 0036130910 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01621-9 Document Type: Article

Times cited : (6)

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