TDDB data generation for fast lifetime projections based on V-ramp stress data

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 2, 2007, Pages 278-284

  Aal, Andreas ^a,b  

^a IEEE

^b ELMOS Semiconductor AG   (Germany)

Author keywords

Fast lifetime projection; Knowledge based qualification; Time dependent dielectric breakdown (TDDB); V ramp

Indexed keywords

EXTRAPOLATION; KNOWLEDGE BASED SYSTEMS; MATHEMATICAL MODELS; PROCESS ENGINEERING;

FAST LIFETIME PROJECTION; KNOWLEDGE-BASED QUALIFICATION; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB); V-RAMP;

ELECTRIC BREAKDOWN;

EID: 34548245896     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.901091     Document Type: Conference Paper

References (10)

1. Y. Chen et al., "The correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides," in Proc. IEEE Int. Reliab. Phys. Symp., 1998, pp. 87-91.
2. E. Mullen et al., "A technique to predict gate oxide reliability using fast on-line ramped Qbd testing," in Proc. IEEE Int. Reliab. Phys. Symp., 2002, pp. 292-297.
3. 2 thin-films and their impact on time-dependent dielectric breakdown," in Proc. IEEE Int. Reliab. Phys. Symp., 1998, pp. 47-56.
4. Foundry Process Qualification Guidelines (Wafer Fabrication Manufacturing Sites), p. 19, 2004, Arlington, VA: JEDEC/FSA Joint Publ. JP-001.01.
5. E. Wu et al., "Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides," in IEDM Tech. Dig., San Francisco, CA, 2000, pp. 541-544.
6. A. Aal, "Fast prediction of gate oxide reliability-Application of the cumulative damage principle for transforming V-ramp breakdown distributions into TDDB failure distributions," in Proc. IEEE Integr. Reliab. Workshop, Final Rep., 2006, pp. 182-185.
7. R. Degraeve et al., "A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown," IEEE Trans. Electron Devices, vol. 45, no. 2, pp. 472-481, Feb. 1998.
8. 2 reliability," IEEE Trans. Electron Devices, vol. 43, no. 1, pp. 70-80, Jan. 1996.
9. R. Bottini et al., "Oxide reliability: A new methodology for reliability evaluation at parametric testing," in Proc. IEEE Integr. Reliab. Workshop, Final Rep., 2006, pp. 142-145.
10. Procedure for the Wafer-Level Testing of Thin Dielectrics, p. 11, 2001, Arlington, VA: JEDEC/FSA Joint Publ. JESD35-A.