Fast prediction of gate oxide reliability - Application of the cumulative damage principle for transforming V-ramp breakdown distributions into TDDB failure distributions

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2006, Pages 182-185

  Aal, A ^a  

^a ELMOS Semiconductor AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DATA REDUCTION; PARAMETER ESTIMATION; RELIABILITY; STRESS ANALYSIS; VOLTAGE MEASUREMENT;

FAILURE DISTRIBUTIONS; GATE OXIDE RELIABILITY; STRESS LEVELS;

GATES (TRANSISTOR);

EID: 34548282783     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2006.305241     Document Type: Conference Paper

References (5)

1. Y. Chen et al., "The Correlation of Highly Accelerated Qbd Tests to TDDB Life Tests for Ultra-Thin Gate Oxides", IEEE Proc. Int. Rel. Phys. Symp., p. 87-91, 1998
2. E. Mullen et al., "A Technique To Predict Gate Oxide Reliability Using Fast On-Line Ramped Qbd Testing", IEEE Proc. Int. Rel. Phys. Symp., p. 292-297, 2002
3. 2 Thin-Films and Their Impact on Time-Dependent Dielectric Breakdown", IEEE Proc. Int. Rel. Phys. Symp., p. 47-56, 1998
4. JP-001, "Foundry Process Qualification Guidelines (Wafer Fabrication Manufacturing Sites)", JEDEC/FSA Joint Publication, p. 19
5. R. Degraeve et al, "A New Model for the Field Dependence of Intrinsic and Extrinsic Time-Dependent Dielectric Breakdown", IEEE Trans. on Electron Devices, Vol. 45, No. 2, p. 472-481