A technique to predict gate oxide reliability using fast on-line ramped QBD testing

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 292-297

  Mullen, E ^a   Leveugle, C ^a   Molyneaux, J ^a   Prendergast, J ^b   Suehle, J S ^c  

^a ANALOG DEVICES   (Ireland)

^b Department of Chemistry   (Ireland)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Costs; Delay effects; Dielectric measurements; Fabrication; Foundries; Packaging; Q measurement; Testing; Time measurement; Wafer scale integration

Indexed keywords

COSTS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRONICS PACKAGING; FABRICATION; FOUNDRIES; GATES (TRANSISTOR); INTEGRATION TESTING; PACKAGING; RELIABILITY; TESTING; TIME MEASUREMENT; WSI CIRCUITS;

DELAY EFFECTS; DIELECTRIC INTEGRITY; DIELECTRIC MEASUREMENTS; GATE OXIDE RELIABILITY; PRODUCTION ENVIRONMENTS; Q MEASUREMENTS; RELIABILITY PREDICTION; TIME DEPENDENT DIELECTRIC BREAKDOWN;

LEAKAGE CURRENTS;

EID: 34548210156     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996651     Document Type: Conference Paper

References (8)

1. BD Tests to TDDB Life Tests for Ultra-Thin Gate Oxides," IRPS, pgs. 87-91, 1998.
2. Yuan Chen, "The Sensitivity and Correlation Study on Jramp Test and High-Field Constant-Voltage Stress Test for WLR," IRW, pgs. 108-110, 2000.
3. 2," IRPS, pg 120, 1994.
4. 2 Films with Bimodal Failure Populations," IRPS, pg 124, 1995.
5. R. Degreave, "Tutorial on Dielectric Breakdown," IRPS, Tutorial Session 7, 1997.
6. th ESREF, 1998.
7. R. Degreave, "Constant Current Charge-to-Breakdown: Still a Valid Tool to Study the Reliability of MOS Structures," IRPS, pgs 62-67, 1998.
8. Eric S. Snyder, "Detecting Breakdown In Ultra-Thin Dielectrics Using a Fast Voltage Ramp," IRW, pg 120, 1999.