Scanning capacitance microscopy for alkylsilane-monolayer-covered Si substrate patterned by scanning probe lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 8 B, 2007, Pages 5621-5625

  Han, Jiwon ^a   Lee, Kyung Hwang ^a,b   Fujii, Shosuke ^a   Sano, Hikaru ^a   Kim, Young Jong ^a   Murase, Kuniaki ^a   Ichii, Takashi ^a   Sugimura, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

^b Research Institute of Industrial Science and Technology (RIST)   (South Korea)

Author keywords

Charge trap; Kelvin probe force microscopy (KFM); Nanollthography; Scanning capacitance microscopy (SCM); Self assembled monolayer (SAM)

Indexed keywords

CHARGE TRAPPING; ELECTRODES; LITHOGRAPHY; SUBSTRATES;

KELVIN-PROBE FORCE MICROSCOPY (KFM); SCANNING CAPACITANCE MICROSCOPY (SCM);

SELF ASSEMBLED MONOLAYERS;

EID: 34548200770     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5621     Document Type: Article

References (24)

1. W. J. Dressick and J. M. Calvert: Jpn. J. Appl. Phys. 32 (1993) 5829.
2. X.-M. Li, J. Huskens, and D. N. Reinhoudt: J. Mater. Chem. 14 (2004) 2954.
3. H. Sugimura: Int. J. Nanotechnol. 2 (2005) 314.
4. C. R. K. Marrian, F. K. Perkins, S. L. Brandow, T. S. Koloski, E. A. Dobisz, and J. M. Calvert: Appl. Phys. Lett. 64 (1994) 390.
5. F. K. Perkins, E. A. Dobisz, S. L. Brandow, T. S. Koloski, J. M. Calvert, K. W. Rhee, J. E. Kosakowski, and C R. K. Marrian: J. Vac. Sci. Technol. B 12 (1994) 3725.
6. H. Sugimura and N. Nakagiri: Langmuir 11 (1995) 3623.
7. H. Sugimura, K. Okiguchi, N. Nakagiri, and M. Miyashita: J. Vac. Sci. Technol. B 14 (1996) 4.140.
8. H. Sugimura and N. Nakagiri: J. Am. Chem. Soc. 119 (1997) 9226.
9. R. Maoz, S. R Cohen, and J. Sagiv: Adv. Mater. 11 (1999) 55.
10. Y. Cai and B. M. Ocko: J. Am. Chem. Soc. 127 (2005) 16287.
11. R. C Barrett and C F. Quate: J. Appl. Phys. 70 (1991) 2725.
12. A. Kikukawa, S. Hosaka, and R. Imura: Appl. Phys. Lett. 66 (1995) 3510.
13. T. Yamamoto, Y. Suzuki, M. Miyashita, H. Sugimura, and N. Nakagiri: Jpn. J. Appl. Phys. 36 (1997) 1922.
14. N. Nakagiri, H. Sugimura, Y. Ishida, K. Hayashi, and O. Takai: Surf. Sci. 532 (2003) 999.
15. H. Sugimura, T. Hanji, K. Hayashi, and O. Takai: Adv. Mater. 14 (2002) 524.
16. H. Sugimura, A. Hozumi, T. Kameyama, and O. Takai: Surf. Interface Anal. 34 (2002) 550.
17. Y. Cho, S. Kazuta, and K. Matsuura: Appl. Phys. Lett. 75 (1999) 2833.
18. H. Sugimura, Y. Ishida, K. Hayashi, and O. Takai: Appl. Phys. Lett. 80 (2002) 1459.
19. H. Sugimura, T. Hanji, K. Hayashi, and O. Takai: Ultramicroscopy 91 (2002) 221.
20. H. Sugimura, K. Hayashi, N. Saito, N. Nakagiri, and O. Takai: Appl. Surf. Sci. 188 (2002) 403.
21. C. A. Richter, C A. Hacker, L. J. Richter, O. A. Kirillov, J. S. Suehle, and E. M. Vogel: Solid-State Electron. 50 (2006) 1088.
22. Y. Fukano, T. Uchihashi, T. Okusako, A. Chayahara, Y. Sugawara, Y. Yamanishi, T. Oasa, and S. Morita: Jpn. J. Appl. Phys. 33 (1994) 379.
23. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed., p. 365.
24. T. Brožek and C R. Viswanathan: Appl. Phys. Lett. 68 (1996) 1826.