Scanning capacitance microscopy as a characterization tool for semiconductor devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1922-1926

  Yamamoto, Takuma ^a   Suzuki, Yoshihiko ^a   Miyashita, Masayuki ^a   Sugimura, Hiroyuki ^a   Nakagiri, Nobuyuki ^a  

^a NIKON CORPORATION   (Japan)

Author keywords

AFM; Capacitance; Dopant concentration; Dopant type; MOS; Scanning capacitance microscopy; SCM; Silicon

Indexed keywords

EID: 0010685919     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1922     Document Type: Article

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