Influence of process pressure on HW-CVD deposited a-SiC:H films

Surface and Coatings Technology

Volumn 201, Issue 3-4, 2006, Pages 1132-1137

  Swain, Bibhu P ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

a SiC:H; FTIR; HWCVD; Raman and XPS

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DEGRADATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; OPTICAL PROPERTIES; RAMAN SPECTROSCOPY; STRUCTURE (COMPOSITION); X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON CARBON FILMS; PROCESS PRESSURES;

SILICON CARBIDE;

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DEGRADATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; OPTICAL PROPERTIES; RAMAN SPECTROSCOPY; SILICON CARBIDE; STRUCTURE (COMPOSITION); X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 33748524181     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2006.01.059     Document Type: Article

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