Self-assembled quantum dot formation during the growth of In0.4Ga0.6As on GaAs(0 0 1) by metal-organic vapor phase epitaxy: The role of In segregation

Journal of Crystal Growth

Volumn 307, Issue 1, 2007, Pages 44-50

  Cederberg, J G ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

A1. Low dimensional structures; A1. Nanostructures; A1. Segregation; A3. Metal organic vapor phase epitaxy; B2. Semiconducting ternary compounds

Indexed keywords

GROWTH TEMPERATURE; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURES; PARTIAL PRESSURE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE;

LOW-DIMENSIONAL STRUCTURES; SEGREGATION; SEMICONDUCTING TERNARY COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34548120686     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.05.019     Document Type: Article

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