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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 15, 2002, Pages 1553181-1553185

Growth mode of InxGa1-xAs (0≤x≤0.5) on GaAs(001) under As-deficient conditions

(2) Ohtake, Akihiro a Ozeki, Masashi a

a JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM;

ARTICLE; ATOM; ELECTRON TRANSPORT; FILM; GROWTH; SEMICONDUCTOR;

EID: 0037089291 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (7)

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