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Thin Solid Films

Volumn 367, Issue 1-2, 2000, Pages 277-280

Transition thickness of semiconductor heteroepitaxy

(6) Sasaki, A a,d Weber, E R a Liliental Weber, Z b Ruvimov, S b Washburn, J b Nabetani, Y c,e

a No 1760 (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c KYOTO UNIVERSITY (Japan)

d OSAKA ELECTRO COMMUNICATION UNIVERSITY (Japan)

e UNIVERSITY OF YAMANASHI (Japan)

Author keywords

MBE growth modes; Thermodynamic approach to theory of epitaxial growth; Transition thickness from 2D to 3D growth

Indexed keywords

EID: 0013106150 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(00)00688-X Document Type: Article

Times cited : (16)

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