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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1056-1058

Morphological stability of strained-layer semiconductors

(1) Wessels, B W a

a Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE ELEMENT METHOD; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACES;

MORPHOLOGICAL STABILITY; SEMICONDUCTOR SYSTEMS; STRANSKI-KRASTANOW GROWTH MODE;

SEMICONDUCTING FILMS;

EID: 0031185933 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.589392 Document Type: Article

Times cited : (31)

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