Simulation results from double-sided 3-D detectors

IEEE Transactions on Nuclear Science

Volumn 54, Issue 4, 2007, Pages 1435-1443

  Pennicard, D ^a   Pellegrini, G ^b   Lozano, M ^b   Bates, R ^a   Parkes, C ^a   O'Shea, V ^a   Wright, V ^c  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c SCIENCE AND TECHNOLOGY FACILITIES COUNCIL   (United Kingdom)

Author keywords

3 D detectors; Radiation hardening; Semiconductor radiation detectors; Simulation; Three dimensional

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; FINITE ELEMENT METHOD; SEMICONDUCTOR DETECTORS;

3-D DETECTORS; DEPLETION VOLTAGE; ELECTRODE COLUMNS;

RADIATION DETECTORS;

EID: 34548099974     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.902374     Document Type: Conference Paper

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