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Volumn 568, Issue 1, 2006, Pages 27-33
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3D simulations of 3D silicon radiation detector structures
c
CERN
(Switzerland)
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Author keywords
3D silicon detectors; 3D simulation; Capacitance voltage characteristics; Current voltage characteristics; Surface effects
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Indexed keywords
COMPUTATIONAL GEOMETRY;
COMPUTER SIMULATION;
ELECTRIC POTENTIAL;
FINITE ELEMENT METHOD;
INTERFACES (MATERIALS);
LEAKAGE CURRENTS;
SILICON;
SOFTWARE ENGINEERING;
DETECTOR STRUCTURES;
ELECTROSTATIC POTENTIAL;
SURFACE CURRENTS;
SURFACE RECOMBINATION;
RADIATION DETECTORS;
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EID: 33750330316
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nima.2006.07.015 Document Type: Article |
Times cited : (11)
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References (21)
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