Comparison of radiation hardness of P-in-N, N-in-N, and N-in-P silicon pad detectors

IEEE Transactions on Nuclear Science

Volumn 52, Issue 5 II, 2005, Pages 1468-1473

  Lozano, M ^a   Pellegrini, G ^a   Fleta, C ^a   Loderer, C ^b   Rafi J M ^a   Ullan M ^a   Campabadal, F ^a   Martinez C ^a   Key, M ^a   Casse, G ^c   Allport, P ^c  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b MUNICH UNIVERSITY OF APPLIED SCIENCES   (Germany)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Detector technology; N in N; N in P; P in N; Radiation hardness; Silicon radiation detectors

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; SILICON; SILICON WAFERS;

DETECTOR TECHNOLOGY; N-IN-N; N-IN-P; RADIATION HARDNESS; SILICON RADIATION DETECTORS;

RADIATION DETECTORS;

EID: 29144469387     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.855809     Document Type: Conference Paper

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