Device simulations of isolation techniques for silicon microstrip detectors made on p-type substrates

IEEE Transactions on Nuclear Science

Volumn 53, Issue 3, 2006, Pages 1694-1705

  Piemonte, Claudio ^a,b  

^a IEEE   (Italy)

^b ITC IRST   (Italy)

Author keywords

Device simulations; Radiation damage; Radiation silicon detectors

Indexed keywords

DEVICE SIMULATIONS; P-TYPE SUBSTRATES; RADIATION SILICON DETECTORS; SINGLE-SIDE N-TYPE DEVICES;

CAPACITANCE; DETECTORS; ELECTRODES; RADIATION DAMAGE; RADIATION HARDENING; SUBSTRATES;

MICROSTRIP DEVICES;

EID: 33746355238     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.872500     Document Type: Article

References (10)

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